Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
115 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
2.5
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V dc
Pin Count
3
Number of Elements per Chip
1
Configuration
Single
Dimensions
10.53 x 4.83 x 9.28mm
Maximum Operating Temperature
+150 °C
Height
9.28mm
Country of Origin
China
BD 5.512
BD 0.220 Each (In a Pack of 25) (Exc. Vat)
BD 6.063
BD 0.242 Each (In a Pack of 25) (inc. VAT)
Standard
25
BD 5.512
BD 0.220 Each (In a Pack of 25) (Exc. Vat)
BD 6.063
BD 0.242 Each (In a Pack of 25) (inc. VAT)
Standard
25
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Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
115 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
2.5
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V dc
Pin Count
3
Number of Elements per Chip
1
Configuration
Single
Dimensions
10.53 x 4.83 x 9.28mm
Maximum Operating Temperature
+150 °C
Height
9.28mm
Country of Origin
China