Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.9mm
Width
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
0.94mm
Product details
N-Channel Power MOSFET, 50V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
BD 0.110
Each (Supplied on a Reel) (Exc. Vat)
BD 0.121
Each (Supplied on a Reel) (Including VAT)
25
BD 0.110
Each (Supplied on a Reel) (Exc. Vat)
BD 0.121
Each (Supplied on a Reel) (Including VAT)
25
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
25 - 100 | BD 0.110 | BD 2.750 |
125 - 475 | BD 0.105 | BD 2.625 |
500 - 1225 | BD 0.100 | BD 2.500 |
1250+ | BD 0.100 | BD 2.500 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.9mm
Width
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
0.94mm
Product details