Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.9mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
0.94mm
Product details
N-Channel Power MOSFET, 50V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
BD 0.962
BD 0.038 Each (In a Pack of 25) (Exc. Vat)
BD 1.058
BD 0.042 Each (In a Pack of 25) (inc. VAT)
Standard
25
BD 0.962
BD 0.038 Each (In a Pack of 25) (Exc. Vat)
BD 1.058
BD 0.042 Each (In a Pack of 25) (inc. VAT)
Standard
25
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 25 - 225 | BD 0.038 | BD 0.962 |
| 250 - 1225 | BD 0.016 | BD 0.412 |
| 1250 - 2475 | BD 0.016 | BD 0.412 |
| 2500 - 12475 | BD 0.016 | BD 0.412 |
| 12500+ | BD 0.016 | BD 0.412 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.9mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
0.94mm
Product details


