onsemi P-Channel MOSFET, 9 A, 30 V, 8-Pin ECH ECH8310-TL-H
Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
30 V
Package Type
ECH
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
2.3mm
Length
2.9mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
0.9mm
Country of Origin
China
Product details
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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BD 511.500
BD 0.170 Each (On a Reel of 3000) (Exc. Vat)
BD 562.650
BD 0.187 Each (On a Reel of 3000) (inc. VAT)
3000
BD 511.500
BD 0.170 Each (On a Reel of 3000) (Exc. Vat)
BD 562.650
BD 0.187 Each (On a Reel of 3000) (inc. VAT)
3000
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Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
30 V
Package Type
ECH
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
2.3mm
Length
2.9mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
0.9mm
Country of Origin
China
Product details
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products