Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
116 A
Maximum Drain Source Voltage
80 V
Package Type
PQFN8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
113.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
5.85mm
Typical Gate Charge @ Vgs
51 nC @ 10 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
1.05mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
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BD 0.590
Each (On a Reel of 3000) (Exc. Vat)
BD 0.649
Each (On a Reel of 3000) (Including VAT)
3000
BD 0.590
Each (On a Reel of 3000) (Exc. Vat)
BD 0.649
Each (On a Reel of 3000) (Including VAT)
3000
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
116 A
Maximum Drain Source Voltage
80 V
Package Type
PQFN8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
113.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
5.85mm
Typical Gate Charge @ Vgs
51 nC @ 10 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
1.05mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V