N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-220AB onsemi FDP20N50

RS Stock No.: 671-4809Brand: onsemiManufacturers Part No.: FDP20N50
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

45.6 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.1mm

Width

4.7mm

Transistor Material

Si

Height

9.4mm

Series

UniFET

Minimum Operating Temperature

-55 °C

Product details

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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BD 1.550

Each (Exc. Vat)

BD 1.705

Each (inc. VAT)

N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-220AB onsemi FDP20N50
Select packaging type

BD 1.550

Each (Exc. Vat)

BD 1.705

Each (inc. VAT)

N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-220AB onsemi FDP20N50
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit price
1 - 4BD 1.550
5 - 9BD 1.525
10 - 14BD 1.515
15 - 24BD 1.490
25+BD 1.480

Ideate. Create. Collaborate

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No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

45.6 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.1mm

Width

4.7mm

Transistor Material

Si

Height

9.4mm

Series

UniFET

Minimum Operating Temperature

-55 °C

Product details

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more