N-Channel MOSFET, 600 mA, 20 V, 3-Pin SOT-523 onsemi FDY302NZ
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-523 (SC-89)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.7mm
Typical Gate Charge @ Vgs
0.8 nC @ 4.5 V
Width
0.98mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Height
0.78mm
Product details
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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BD 0.070
Each (In a Pack of 100) (Exc. Vat)
BD 0.077
Each (In a Pack of 100) (Including VAT)
100
BD 0.070
Each (In a Pack of 100) (Exc. Vat)
BD 0.077
Each (In a Pack of 100) (Including VAT)
100
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 100 - 900 | BD 0.070 | BD 7.000 |
| 1000 - 2900 | BD 0.050 | BD 5.000 |
| 3000 - 8900 | BD 0.040 | BD 4.000 |
| 9000 - 23900 | BD 0.035 | BD 3.500 |
| 24000+ | BD 0.035 | BD 3.500 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-523 (SC-89)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.7mm
Typical Gate Charge @ Vgs
0.8 nC @ 4.5 V
Width
0.98mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Height
0.78mm
Product details
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products