onsemi FGA60N65SMD IGBT, 120 A 650 V, 3-Pin TO-3PN, Through Hole
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
120 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
600 W
Package Type
TO-3PN
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.8 x 5 x 20.1mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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BD 62.370
BD 2.079 Each (In a Tube of 30) (Exc. Vat)
BD 68.607
BD 2.287 Each (In a Tube of 30) (inc. VAT)
30
BD 62.370
BD 2.079 Each (In a Tube of 30) (Exc. Vat)
BD 68.607
BD 2.287 Each (In a Tube of 30) (inc. VAT)
30
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Please check again later.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 90 | BD 2.079 | BD 62.370 |
| 120 - 240 | BD 1.826 | BD 54.780 |
| 270 - 480 | BD 1.798 | BD 53.955 |
| 510+ | BD 1.622 | BD 48.675 |
Ideate. Create. Collaborate
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No hidden fees!
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Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
120 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
600 W
Package Type
TO-3PN
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.8 x 5 x 20.1mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products