Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
333 W
Number of Transistors
1
Package Type
TO-247 G03
Mounting Type
Through Hole
Channel Type
P
Pin Count
3
Transistor Configuration
Single
Dimensions
15.87 x 4.82 x 20.82mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
3813pF
Maximum Operating Temperature
+175 °C
Energy Rating
50mJ
Country of Origin
China
BD 59.565
BD 1.986 Each (In a Tube of 30) (Exc. Vat)
BD 65.521
BD 2.185 Each (In a Tube of 30) (inc. VAT)
30
BD 59.565
BD 1.986 Each (In a Tube of 30) (Exc. Vat)
BD 65.521
BD 2.185 Each (In a Tube of 30) (inc. VAT)
30
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Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
333 W
Number of Transistors
1
Package Type
TO-247 G03
Mounting Type
Through Hole
Channel Type
P
Pin Count
3
Transistor Configuration
Single
Dimensions
15.87 x 4.82 x 20.82mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
3813pF
Maximum Operating Temperature
+175 °C
Energy Rating
50mJ
Country of Origin
China