onsemi FJPF5027OTU NPN Transistor, 3 A, 800 V, 3-Pin TO-220F

RS Stock No.: 124-1399Brand: onsemiManufacturers Part No.: FJPF5027OTU
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Technical Document

Specifications

Brand

onsemi

Transistor Type

NPN

Maximum DC Collector Current

3 A

Maximum Collector Emitter Voltage

800 V

Package Type

TO-220F

Mounting Type

Through Hole

Maximum Power Dissipation

40 W

Minimum DC Current Gain

15, 20

Transistor Configuration

Single

Maximum Collector Base Voltage

1100 V

Maximum Emitter Base Voltage

7 V

Maximum Operating Frequency

15 MHz

Pin Count

3

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

10.16 x 4.7 x 15.87mm

Product details

High Voltage NPN Transistors, Fairchild Semiconductor

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.

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Stock information temporarily unavailable.

BD 23.375

BD 0.468 Each (In a Tube of 50) (Exc. Vat)

BD 25.713

BD 0.515 Each (In a Tube of 50) (inc. VAT)

onsemi FJPF5027OTU NPN Transistor, 3 A, 800 V, 3-Pin TO-220F

BD 23.375

BD 0.468 Each (In a Tube of 50) (Exc. Vat)

BD 25.713

BD 0.515 Each (In a Tube of 50) (inc. VAT)

onsemi FJPF5027OTU NPN Transistor, 3 A, 800 V, 3-Pin TO-220F
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Tube
50 - 50BD 0.468BD 23.375
100 - 200BD 0.440BD 22.000
250+BD 0.429BD 21.450

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Brand

onsemi

Transistor Type

NPN

Maximum DC Collector Current

3 A

Maximum Collector Emitter Voltage

800 V

Package Type

TO-220F

Mounting Type

Through Hole

Maximum Power Dissipation

40 W

Minimum DC Current Gain

15, 20

Transistor Configuration

Single

Maximum Collector Base Voltage

1100 V

Maximum Emitter Base Voltage

7 V

Maximum Operating Frequency

15 MHz

Pin Count

3

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

10.16 x 4.7 x 15.87mm

Product details

High Voltage NPN Transistors, Fairchild Semiconductor

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in