Technical Document
Specifications
Brand
onsemiTransistor Type
NPN + PNP
Maximum DC Collector Current
200 mA
Maximum Collector Emitter Voltage
40 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Transistor Configuration
Isolated
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Pin Count
6
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Dimensions
2.2 x 1.35 x 1mm
Product details
RF Bipolar Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
BD 1.100
BD 0.011 Each (Supplied as a Tape) (Exc. Vat)
BD 1.210
BD 0.012 Each (Supplied as a Tape) (inc. VAT)
Standard
100
BD 1.100
BD 0.011 Each (Supplied as a Tape) (Exc. Vat)
BD 1.210
BD 0.012 Each (Supplied as a Tape) (inc. VAT)
Standard
100
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Technical Document
Specifications
Brand
onsemiTransistor Type
NPN + PNP
Maximum DC Collector Current
200 mA
Maximum Collector Emitter Voltage
40 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Transistor Configuration
Isolated
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Pin Count
6
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Dimensions
2.2 x 1.35 x 1mm
Product details
RF Bipolar Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.


