Technical Documents
Specifications
Brand
onsemiProduct Type
Optocoupler
Mount Type
Through Hole
Maximum Forward Voltage
1.3V
Number of Channels
2
Packaging
Tube
Number of Pins
8
Package Type
PDIP
Input Current Type
DC
Typical Rise Time
2.4μs
Maximum Input Current
10mA
Isolation Voltage
5kVrms
Minimum Operating Temperature
-55°C
Maximum Current Transfer Ratio
6%
Maximum Operating Temperature
100°C
Typical Fall Time
2.4μs
Minimum Current Transfer Ratio
0.5%
Standards/Approvals
EN, IEC, UL
Series
MCT
Automotive Standard
No
Product Details
The MCT9001 optocoupler has two channels for density applications. For four channel applications, two packages fit into a standard 16-pin DIP socket. Each channel is an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode.
Stock information temporarily unavailable.
BD 13.005
BD 0.260 Each (In a Tube of 50) (Exc. Vat)
BD 14.305
BD 0.286 Each (In a Tube of 50) (inc. VAT)
50
BD 13.005
BD 0.260 Each (In a Tube of 50) (Exc. Vat)
BD 14.305
BD 0.286 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | BD 0.260 | BD 13.005 |
| 100 - 950 | BD 0.150 | BD 7.514 |
| 1000 - 1950 | BD 0.150 | BD 7.514 |
| 2000 - 9950 | BD 0.150 | BD 7.514 |
| 10000+ | BD 0.144 | BD 7.225 |
Technical Documents
Specifications
Brand
onsemiProduct Type
Optocoupler
Mount Type
Through Hole
Maximum Forward Voltage
1.3V
Number of Channels
2
Packaging
Tube
Number of Pins
8
Package Type
PDIP
Input Current Type
DC
Typical Rise Time
2.4μs
Maximum Input Current
10mA
Isolation Voltage
5kVrms
Minimum Operating Temperature
-55°C
Maximum Current Transfer Ratio
6%
Maximum Operating Temperature
100°C
Typical Fall Time
2.4μs
Minimum Current Transfer Ratio
0.5%
Standards/Approvals
EN, IEC, UL
Series
MCT
Automotive Standard
No
Product Details
The MCT9001 optocoupler has two channels for density applications. For four channel applications, two packages fit into a standard 16-pin DIP socket. Each channel is an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode.
