Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
0.6 nC @ 4 V
Transistor Material
Si
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm
Country of Origin
China
Product details
N-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
BD 0.150
Each (Supplied on a Reel) (Exc. Vat)
BD 0.165
Each (Supplied on a Reel) (Including VAT)
20
BD 0.150
Each (Supplied on a Reel) (Exc. Vat)
BD 0.165
Each (Supplied on a Reel) (Including VAT)
20
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
20 - 80 | BD 0.150 | BD 3.000 |
100 - 180 | BD 0.075 | BD 1.500 |
200 - 980 | BD 0.065 | BD 1.300 |
1000 - 1980 | BD 0.060 | BD 1.200 |
2000+ | BD 0.055 | BD 1.100 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
0.6 nC @ 4 V
Transistor Material
Si
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm
Country of Origin
China
Product details