Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
0.6 nC @ 4 V
Maximum Operating Temperature
+150 °C
Height
1.01mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
BD 2.860
BD 0.143 Each (In a Pack of 20) (Exc. Vat)
BD 3.146
BD 0.157 Each (In a Pack of 20) (inc. VAT)
Standard
20
BD 2.860
BD 0.143 Each (In a Pack of 20) (Exc. Vat)
BD 3.146
BD 0.157 Each (In a Pack of 20) (inc. VAT)
Standard
20
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 20 - 180 | BD 0.143 | BD 2.860 |
| 200 - 480 | BD 0.121 | BD 2.420 |
| 500 - 980 | BD 0.104 | BD 2.090 |
| 1000 - 1980 | BD 0.094 | BD 1.870 |
| 2000+ | BD 0.088 | BD 1.760 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
0.6 nC @ 4 V
Maximum Operating Temperature
+150 °C
Height
1.01mm
Minimum Operating Temperature
-55 °C
Product details


