Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Collector Emitter Voltage
-300 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V dc
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.53 x 4.83 x 9.28mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
BD 18.425
BD 0.368 Each (In a Tube of 50) (Exc. Vat)
BD 20.267
BD 0.405 Each (In a Tube of 50) (inc. VAT)
50
BD 18.425
BD 0.368 Each (In a Tube of 50) (Exc. Vat)
BD 20.267
BD 0.405 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | BD 0.368 | BD 18.425 |
| 100 - 200 | BD 0.286 | BD 14.300 |
| 250 - 450 | BD 0.280 | BD 14.025 |
| 500 - 950 | BD 0.248 | BD 12.375 |
| 1000+ | BD 0.209 | BD 10.450 |
Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Collector Emitter Voltage
-300 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V dc
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.53 x 4.83 x 9.28mm
Maximum Operating Temperature
+150 °C
Country of Origin
China


