Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
16 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-3BPL
Mounting Type
Through Hole
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Collector Base Voltage
400 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20.3 x 5.3 x 29mm
Country of Origin
China
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
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BD 1.725
Each (In a Tube of 25) (Exc. Vat)
BD 1.897
Each (In a Tube of 25) (Including VAT)
25
BD 1.725
Each (In a Tube of 25) (Exc. Vat)
BD 1.897
Each (In a Tube of 25) (Including VAT)
25
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
25 - 75 | BD 1.725 | BD 43.125 |
100 - 475 | BD 1.480 | BD 37.000 |
500 - 975 | BD 1.320 | BD 33.000 |
1000+ | BD 1.120 | BD 28.000 |
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
16 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-3BPL
Mounting Type
Through Hole
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Collector Base Voltage
400 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20.3 x 5.3 x 29mm
Country of Origin
China
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.