Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
16 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-3BPL
Mounting Type
Through Hole
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Collector Base Voltage
400 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20.3 x 5.3 x 29mm
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
BD 2.844
BD 2.844 Each (Exc. Vat)
BD 3.128
BD 3.128 Each (inc. VAT)
Standard
1
BD 2.844
BD 2.844 Each (Exc. Vat)
BD 3.128
BD 3.128 Each (inc. VAT)
Standard
1
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Please check again later.
| Quantity | Unit price |
|---|---|
| 1 - 9 | BD 2.844 |
| 10 - 99 | BD 2.277 |
| 100 - 499 | BD 2.008 |
| 500 - 999 | BD 1.815 |
| 1000+ | BD 1.573 |
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
16 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-3BPL
Mounting Type
Through Hole
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Collector Base Voltage
400 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20.3 x 5.3 x 29mm
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.


