Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-15 A
Maximum Collector Emitter Voltage
-350 V
Package Type
TO-3BPL
Mounting Type
Through Hole
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Collector Base Voltage
350 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
35 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
26.4 x 20.3 x 5.3mm
Maximum Operating Temperature
+150 °C
Product details
PNP Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
BD 3.382
BD 3.382 Each (Exc. Vat)
BD 3.720
BD 3.720 Each (inc. VAT)
Standard
1
BD 3.382
BD 3.382 Each (Exc. Vat)
BD 3.720
BD 3.720 Each (inc. VAT)
Standard
1
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| Quantity | Unit price |
|---|---|
| 1 - 9 | BD 3.382 |
| 10+ | BD 2.915 |
Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-15 A
Maximum Collector Emitter Voltage
-350 V
Package Type
TO-3BPL
Mounting Type
Through Hole
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Collector Base Voltage
350 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
35 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
26.4 x 20.3 x 5.3mm
Maximum Operating Temperature
+150 °C
Product details
PNP Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.


