Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
30 A
Maximum Collector Emitter Voltage
450 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
250 W
Minimum DC Current Gain
14
Transistor Configuration
Single
Maximum Collector Base Voltage
1000 V dc
Maximum Emitter Base Voltage
9 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
16.26 x 5.3 x 21.08mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
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BD 2.195
Each (In a Tube of 30) (Exc. Vat)
BD 2.415
Each (In a Tube of 30) (Including VAT)
30
BD 2.195
Each (In a Tube of 30) (Exc. Vat)
BD 2.415
Each (In a Tube of 30) (Including VAT)
30
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
30 - 90 | BD 2.195 | BD 65.850 |
120 - 240 | BD 1.815 | BD 54.450 |
270 - 480 | BD 1.705 | BD 51.150 |
510+ | BD 1.605 | BD 48.150 |
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
30 A
Maximum Collector Emitter Voltage
450 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
250 W
Minimum DC Current Gain
14
Transistor Configuration
Single
Maximum Collector Base Voltage
1000 V dc
Maximum Emitter Base Voltage
9 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
16.26 x 5.3 x 21.08mm
Maximum Operating Temperature
+150 °C
Country of Origin
China