Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
230 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V dc
Pin Count
3
Number of Elements per Chip
1
Dimensions
16.26 x 5.3 x 21.08mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
BD 37.785
BD 1.260 Each (In a Tube of 30) (Exc. Vat)
BD 41.563
BD 1.386 Each (In a Tube of 30) (inc. VAT)
30
BD 37.785
BD 1.260 Each (In a Tube of 30) (Exc. Vat)
BD 41.563
BD 1.386 Each (In a Tube of 30) (inc. VAT)
30
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 90 | BD 1.260 | BD 37.785 |
| 120 - 480 | BD 1.094 | BD 32.835 |
| 510 - 990 | BD 0.990 | BD 29.700 |
| 1020+ | BD 0.968 | BD 29.040 |
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
230 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V dc
Pin Count
3
Number of Elements per Chip
1
Dimensions
16.26 x 5.3 x 21.08mm
Maximum Operating Temperature
+150 °C
Country of Origin
China


