Technical Document
Specifications
Brand
onsemiProduct Type
JFET
Sub Type
Switch-N-Channel
Channel Type
Type N
Maximum Drain Source Voltage Vds
20V
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Maximum Power Dissipation Pd
350mW
Pin Count
3
Drain Source Current Ids
10 to 40 mA
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
2.9mm
Height
1.04mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Stock information temporarily unavailable.
BD 7.803
BD 0.156 Each (In a Pack of 50) (Exc. Vat)
BD 8.583
BD 0.172 Each (In a Pack of 50) (inc. VAT)
Standard
50
BD 7.803
BD 0.156 Each (In a Pack of 50) (Exc. Vat)
BD 8.583
BD 0.172 Each (In a Pack of 50) (inc. VAT)
Stock information temporarily unavailable.
Standard
50
| Quantity | Unit price | Per Pack |
|---|---|---|
| 50 - 450 | BD 0.156 | BD 7.803 |
| 500 - 950 | BD 0.133 | BD 6.647 |
| 1000+ | BD 0.116 | BD 5.780 |
Technical Document
Specifications
Brand
onsemiProduct Type
JFET
Sub Type
Switch-N-Channel
Channel Type
Type N
Maximum Drain Source Voltage Vds
20V
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Maximum Power Dissipation Pd
350mW
Pin Count
3
Drain Source Current Ids
10 to 40 mA
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
2.9mm
Height
1.04mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


