Technical Document
Specifications
Brand
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
-7 to -60mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
125 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
11pF
Source Gate On-Capacitance
11pF
Dimensions
3.04 x 1.4 x 1.01mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
3.04mm
Height
1.01mm
Width
1.4mm
Product details
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
BD 3.025
BD 0.121 Each (In a Pack of 25) (Exc. Vat)
BD 3.327
BD 0.133 Each (In a Pack of 25) (inc. VAT)
Standard
25
BD 3.025
BD 0.121 Each (In a Pack of 25) (Exc. Vat)
BD 3.327
BD 0.133 Each (In a Pack of 25) (inc. VAT)
Standard
25
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 25 - 75 | BD 0.121 | BD 3.025 |
| 100 - 225 | BD 0.072 | BD 1.788 |
| 250 - 475 | BD 0.066 | BD 1.650 |
| 500 - 975 | BD 0.060 | BD 1.512 |
| 1000+ | BD 0.055 | BD 1.375 |
Technical Document
Specifications
Brand
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
-7 to -60mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
125 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
11pF
Source Gate On-Capacitance
11pF
Dimensions
3.04 x 1.4 x 1.01mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
3.04mm
Height
1.01mm
Width
1.4mm
Product details
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


