Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
24 to 60mA
Maximum Drain Source Voltage
25 V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Source Gate On-Capacitance
5pF
Dimensions
3.04 x 1.4 x 1.01mm
Minimum Operating Temperature
-55 °C
Length
3.04mm
Maximum Operating Temperature
+150 °C
Width
1.4mm
Height
1.01mm
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
BD 1.102
BD 0.110 Each (In a Pack of 10) (Exc. Vat)
BD 1.212
BD 0.121 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 1.102
BD 0.110 Each (In a Pack of 10) (Exc. Vat)
BD 1.212
BD 0.121 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | BD 0.110 | BD 1.102 |
100 - 240 | BD 0.100 | BD 0.998 |
250 - 490 | BD 0.089 | BD 0.892 |
500 - 990 | BD 0.079 | BD 0.788 |
1000+ | BD 0.074 | BD 0.735 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
24 to 60mA
Maximum Drain Source Voltage
25 V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Source Gate On-Capacitance
5pF
Dimensions
3.04 x 1.4 x 1.01mm
Minimum Operating Temperature
-55 °C
Length
3.04mm
Maximum Operating Temperature
+150 °C
Width
1.4mm
Height
1.01mm
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.