onsemi MMBTA13LT3G Dual NPN Darlington Transistor, 300 mA 30 V HFE:5000, 3-Pin SOT-23
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
300 mA
Maximum Collector Emitter Voltage
30 V
Maximum Emitter Base Voltage
10 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
5000
Maximum Base Emitter Saturation Voltage
1.5 V
Maximum Collector Base Voltage
30 V
Maximum Collector Emitter Saturation Voltage
1.5 V
Maximum Collector Cut-off Current
100nA
Length
3.04mm
Height
1.01mm
Width
1.4mm
Maximum Power Dissipation
300 mW
Minimum Operating Temperature
-55 °C
Dimensions
3.04 x 1.4 x 1.01mm
Maximum Operating Temperature
+150 °C
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BD 0.010
Each (On a Reel of 10000) (Exc. Vat)
BD 0.011
Each (On a Reel of 10000) (inc. VAT)
10000
BD 0.010
Each (On a Reel of 10000) (Exc. Vat)
BD 0.011
Each (On a Reel of 10000) (inc. VAT)
10000
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Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
300 mA
Maximum Collector Emitter Voltage
30 V
Maximum Emitter Base Voltage
10 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
5000
Maximum Base Emitter Saturation Voltage
1.5 V
Maximum Collector Base Voltage
30 V
Maximum Collector Emitter Saturation Voltage
1.5 V
Maximum Collector Cut-off Current
100nA
Length
3.04mm
Height
1.01mm
Width
1.4mm
Maximum Power Dissipation
300 mW
Minimum Operating Temperature
-55 °C
Dimensions
3.04 x 1.4 x 1.01mm
Maximum Operating Temperature
+150 °C
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products