Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
500 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
117 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
18.5 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.38mm
Product details
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Stock information temporarily unavailable.
Please check again later.
BD 0.095
Each (In a Pack of 5) (Exc. Vat)
BD 0.105
Each (In a Pack of 5) (Including VAT)
5
BD 0.095
Each (In a Pack of 5) (Exc. Vat)
BD 0.105
Each (In a Pack of 5) (Including VAT)
5
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
500 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
117 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
18.5 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.38mm
Product details