P-Channel MOSFET, 27 A, 60 V, 3-Pin D2PAK onsemi NTB25P06G
Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
27 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
120 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.29mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.83mm
Product details
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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BD 4.675
BD 0.935 Each (Supplied as a Tape) (Exc. Vat)
BD 5.143
BD 1.029 Each (Supplied as a Tape) (inc. VAT)
Standard
5
BD 4.675
BD 0.935 Each (Supplied as a Tape) (Exc. Vat)
BD 5.143
BD 1.029 Each (Supplied as a Tape) (inc. VAT)
Standard
5
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Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
27 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
120 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.29mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.83mm
Product details
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products