Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.29mm
Typical Gate Charge @ Vgs
23 nC @ 5 V
Width
9.65mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.83mm
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
BD 8.195
BD 0.820 Each (Supplied as a Tape) (Exc. Vat)
BD 9.015
BD 0.902 Each (Supplied as a Tape) (inc. VAT)
Standard
10
BD 8.195
BD 0.820 Each (Supplied as a Tape) (Exc. Vat)
BD 9.015
BD 0.902 Each (Supplied as a Tape) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tape |
|---|---|---|
| 10 - 10 | BD 0.820 | BD 8.195 |
| 20 - 90 | BD 0.688 | BD 6.875 |
| 100 - 240 | BD 0.616 | BD 6.160 |
| 250 - 490 | BD 0.583 | BD 5.830 |
| 500+ | BD 0.556 | BD 5.555 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.29mm
Typical Gate Charge @ Vgs
23 nC @ 5 V
Width
9.65mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.83mm
Product details


