Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
55 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
11 nC @ 5 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Width
6.22mm
Minimum Operating Temperature
-55 °C
Height
2.38mm
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
BD 2.558
BD 0.512 Each (In a Pack of 5) (Exc. Vat)
BD 2.814
BD 0.563 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 2.558
BD 0.512 Each (In a Pack of 5) (Exc. Vat)
BD 2.814
BD 0.563 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | BD 0.512 | BD 2.558 |
| 50 - 95 | BD 0.440 | BD 2.200 |
| 100 - 495 | BD 0.390 | BD 1.952 |
| 500 - 995 | BD 0.346 | BD 1.732 |
| 1000+ | BD 0.319 | BD 1.595 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
55 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
11 nC @ 5 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Width
6.22mm
Minimum Operating Temperature
-55 °C
Height
2.38mm
Product details


