onsemi N-Channel MOSFET, 18 A, 60 V, 3-Pin DPAK NTD18N06LT4G

RS Stock No.: 773-7875Brand: onsemiManufacturers Part No.: NTD18N06LT4G
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

55 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

11 nC @ 5 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Width

6.22mm

Minimum Operating Temperature

-55 °C

Height

2.38mm

Product details

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Stock information temporarily unavailable.

BD 2.558

BD 0.512 Each (In a Pack of 5) (Exc. Vat)

BD 2.814

BD 0.563 Each (In a Pack of 5) (inc. VAT)

onsemi N-Channel MOSFET, 18 A, 60 V, 3-Pin DPAK NTD18N06LT4G
Select packaging type

BD 2.558

BD 0.512 Each (In a Pack of 5) (Exc. Vat)

BD 2.814

BD 0.563 Each (In a Pack of 5) (inc. VAT)

onsemi N-Channel MOSFET, 18 A, 60 V, 3-Pin DPAK NTD18N06LT4G
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
5 - 45BD 0.512BD 2.558
50 - 95BD 0.440BD 2.200
100 - 495BD 0.390BD 1.952
500 - 995BD 0.346BD 1.732
1000+BD 0.319BD 1.595

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

55 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

11 nC @ 5 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Width

6.22mm

Minimum Operating Temperature

-55 °C

Height

2.38mm

Product details

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more