Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
42 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
62.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Height
2.38mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
BD 8.360
BD 0.418 Each (In a Pack of 20) (Exc. Vat)
BD 9.196
BD 0.460 Each (In a Pack of 20) (inc. VAT)
Standard
20
BD 8.360
BD 0.418 Each (In a Pack of 20) (Exc. Vat)
BD 9.196
BD 0.460 Each (In a Pack of 20) (inc. VAT)
Standard
20
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 20 - 20 | BD 0.418 | BD 8.360 |
| 40 - 80 | BD 0.346 | BD 6.930 |
| 100 - 180 | BD 0.275 | BD 5.500 |
| 200 - 980 | BD 0.248 | BD 4.950 |
| 1000+ | BD 0.226 | BD 4.510 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
42 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
62.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Height
2.38mm
Minimum Operating Temperature
-55 °C
Product details


