Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
55 W
Maximum Gate Source Voltage
-25 V, +25 V
Transistor Material
Si
Length
6.73mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
2.38mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
6.35mm
Minimum Operating Temperature
-55 °C
Country of Origin
Malaysia
Product details
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
BD 0.370
Each (In a Tube of 75) (Exc. Vat)
BD 0.407
Each (In a Tube of 75) (Including VAT)
75
BD 0.370
Each (In a Tube of 75) (Exc. Vat)
BD 0.407
Each (In a Tube of 75) (Including VAT)
75
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
75 - 300 | BD 0.370 | BD 27.750 |
375 - 1425 | BD 0.360 | BD 27.000 |
1500 - 3675 | BD 0.350 | BD 26.250 |
3750+ | BD 0.340 | BD 25.500 |
Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
55 W
Maximum Gate Source Voltage
-25 V, +25 V
Transistor Material
Si
Length
6.73mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
2.38mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
6.35mm
Minimum Operating Temperature
-55 °C
Country of Origin
Malaysia
Product details