Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
55 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
2.38mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
6.35mm
Product details
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
BD 3.750
BD 0.375 Each (In a Pack of 10) (Exc. Vat)
BD 4.125
BD 0.413 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 3.750
BD 0.375 Each (In a Pack of 10) (Exc. Vat)
BD 4.125
BD 0.413 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | BD 0.375 | BD 3.750 |
100 - 240 | BD 0.365 | BD 3.650 |
250 - 990 | BD 0.355 | BD 3.550 |
1000+ | BD 0.355 | BD 3.550 |
Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
55 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
2.38mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
6.35mm
Product details