N-Channel MOSFET, 12 A, 60 V, 3-Pin IPAK onsemi NTD3055L104-1G
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Package Type
IPAK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
104 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
7.4 nC @ 5 V
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.38mm
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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BD 5.638
BD 0.226 Each (In a Pack of 25) (Exc. Vat)
BD 6.202
BD 0.249 Each (In a Pack of 25) (inc. VAT)
Standard
25
BD 5.638
BD 0.226 Each (In a Pack of 25) (Exc. Vat)
BD 6.202
BD 0.249 Each (In a Pack of 25) (inc. VAT)
Standard
25
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Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Package Type
IPAK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
104 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
7.4 nC @ 5 V
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.38mm
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products