Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
28.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
4.7 nC @ 5 V
Maximum Operating Temperature
+175 °C
Height
2.38mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
BD 6.738
BD 0.270 Each (In a Pack of 25) (Exc. Vat)
BD 7.412
BD 0.297 Each (In a Pack of 25) (inc. VAT)
Standard
25
BD 6.738
BD 0.270 Each (In a Pack of 25) (Exc. Vat)
BD 7.412
BD 0.297 Each (In a Pack of 25) (inc. VAT)
Standard
25
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 25 - 25 | BD 0.270 | BD 6.738 |
| 50 - 75 | BD 0.258 | BD 6.462 |
| 100 - 225 | BD 0.253 | BD 6.325 |
| 250 - 475 | BD 0.253 | BD 6.325 |
| 500+ | BD 0.248 | BD 6.188 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
28.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
4.7 nC @ 5 V
Maximum Operating Temperature
+175 °C
Height
2.38mm
Minimum Operating Temperature
-55 °C
Product details


