Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Width
3.7mm
Typical Gate Charge @ Vgs
22 nC @ 10 V dc
Maximum Operating Temperature
+175 °C
Length
6.7mm
Minimum Operating Temperature
-55 °C
Height
1.65mm
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
BD 3.355
BD 0.336 Each (In a Pack of 10) (Exc. Vat)
BD 3.691
BD 0.370 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 3.355
BD 0.336 Each (In a Pack of 10) (Exc. Vat)
BD 3.691
BD 0.370 Each (In a Pack of 10) (inc. VAT)
Standard
10
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Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | BD 0.336 | BD 3.355 |
100 - 240 | BD 0.292 | BD 2.915 |
250 - 490 | BD 0.253 | BD 2.530 |
500+ | BD 0.226 | BD 2.255 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Width
3.7mm
Typical Gate Charge @ Vgs
22 nC @ 10 V dc
Maximum Operating Temperature
+175 °C
Length
6.7mm
Minimum Operating Temperature
-55 °C
Height
1.65mm
Product details