Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
446 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
158 nC @ 10 V
Width
4.82mm
Number of Elements per Chip
1
Forward Diode Voltage
1.3V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
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BD 5.775
Each (In a Tube of 30) (Exc. Vat)
BD 6.353
Each (In a Tube of 30) (Including VAT)
30
BD 5.775
Each (In a Tube of 30) (Exc. Vat)
BD 6.353
Each (In a Tube of 30) (Including VAT)
30
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
30 - 90 | BD 5.775 | BD 173.250 |
120 - 240 | BD 5.620 | BD 168.600 |
270 - 480 | BD 5.475 | BD 164.250 |
510+ | BD 5.340 | BD 160.200 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
446 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
158 nC @ 10 V
Width
4.82mm
Number of Elements per Chip
1
Forward Diode Voltage
1.3V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Country of Origin
China