Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
6.7 A
Maximum Drain Source Voltage
20 V
Package Type
ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
52 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.1mm
Typical Gate Charge @ Vgs
25 nC @ 4.5 V dc
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
BD 2.145
BD 0.214 Each (In a Pack of 10) (Exc. Vat)
BD 2.359
BD 0.235 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 2.145
BD 0.214 Each (In a Pack of 10) (Exc. Vat)
BD 2.359
BD 0.235 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | BD 0.214 | BD 2.145 |
| 50 - 190 | BD 0.204 | BD 2.035 |
| 200 - 490 | BD 0.143 | BD 1.430 |
| 500+ | BD 0.138 | BD 1.375 |
Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
6.7 A
Maximum Drain Source Voltage
20 V
Package Type
ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
52 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.1mm
Typical Gate Charge @ Vgs
25 nC @ 4.5 V dc
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details


