Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
880 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
350 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Product details
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
BD 0.165
Each (Supplied on a Reel) (Exc. Vat)
BD 0.181
Each (Supplied on a Reel) (Including VAT)
25
BD 0.165
Each (Supplied on a Reel) (Exc. Vat)
BD 0.181
Each (Supplied on a Reel) (Including VAT)
25
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
25 - 50 | BD 0.165 | BD 4.125 |
75 - 125 | BD 0.110 | BD 2.750 |
150 - 275 | BD 0.070 | BD 1.750 |
300 - 575 | BD 0.065 | BD 1.625 |
600+ | BD 0.065 | BD 1.625 |
Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
880 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
350 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Product details