Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Length
5mm
Typical Gate Charge @ Vgs
8 nC @ 10 V dc
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Product details
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
BD 2.970
BD 0.297 Each (In a Pack of 10) (Exc. Vat)
BD 3.267
BD 0.327 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 2.970
BD 0.297 Each (In a Pack of 10) (Exc. Vat)
BD 3.267
BD 0.327 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | BD 0.297 | BD 2.970 |
| 100 - 240 | BD 0.258 | BD 2.585 |
| 250 - 490 | BD 0.226 | BD 2.255 |
| 500 - 990 | BD 0.204 | BD 2.035 |
| 1000+ | BD 0.187 | BD 1.870 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Length
5mm
Typical Gate Charge @ Vgs
8 nC @ 10 V dc
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Product details


