Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
276 A
Maximum Drain Source Voltage
60 V
Package Type
SO-8FL
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
167 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
120 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
5.1mm
Length
6.1mm
Minimum Operating Temperature
-55 °C
Height
1.05mm
Country of Origin
Malaysia
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
BD 899.250
BD 0.600 Each (On a Reel of 1500) (Exc. Vat)
BD 989.175
BD 0.660 Each (On a Reel of 1500) (inc. VAT)
1500
BD 899.250
BD 0.600 Each (On a Reel of 1500) (Exc. Vat)
BD 989.175
BD 0.660 Each (On a Reel of 1500) (inc. VAT)
Stock information temporarily unavailable.
1500
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
276 A
Maximum Drain Source Voltage
60 V
Package Type
SO-8FL
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
167 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
120 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
5.1mm
Length
6.1mm
Minimum Operating Temperature
-55 °C
Height
1.05mm
Country of Origin
Malaysia
Product details


