Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
63 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
12.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.28mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Width
15.75mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.82mm
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
BD 0.385
Each (Supplied in a Tube) (Exc. Vat)
BD 0.423
Each (Supplied in a Tube) (Including VAT)
20
BD 0.385
Each (Supplied in a Tube) (Exc. Vat)
BD 0.423
Each (Supplied in a Tube) (Including VAT)
20
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
20 - 80 | BD 0.385 | BD 7.700 |
100 - 240 | BD 0.290 | BD 5.800 |
260 - 480 | BD 0.285 | BD 5.700 |
500 - 980 | BD 0.255 | BD 5.100 |
1000+ | BD 0.215 | BD 4.300 |
Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
63 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
12.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.28mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Width
15.75mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.82mm
Product details