Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.9mm
Maximum Operating Temperature
+150 °C
Length
10.63mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Number of Elements per Chip
1
Height
16.12mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Country of Origin
China
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BD 2.295
Each (In a Tube of 50) (Exc. Vat)
BD 2.525
Each (In a Tube of 50) (Including VAT)
50
BD 2.295
Each (In a Tube of 50) (Exc. Vat)
BD 2.525
Each (In a Tube of 50) (Including VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | BD 2.295 | BD 114.750 |
100+ | BD 2.180 | BD 109.000 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.9mm
Maximum Operating Temperature
+150 °C
Length
10.63mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Number of Elements per Chip
1
Height
16.12mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Country of Origin
China