Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.25V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
3.1 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.01mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
BD 0.050
Each (Supplied as a Tape) (Exc. Vat)
BD 0.055
Each (Supplied as a Tape) (Including VAT)
200
BD 0.050
Each (Supplied as a Tape) (Exc. Vat)
BD 0.055
Each (Supplied as a Tape) (Including VAT)
200
Buy in bulk
quantity | Unit price | Per Tape |
---|---|---|
200 - 200 | BD 0.050 | BD 10.000 |
400 - 800 | BD 0.050 | BD 10.000 |
1000 - 1800 | BD 0.045 | BD 9.000 |
2000+ | BD 0.040 | BD 8.000 |
Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.25V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
3.1 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.01mm
Minimum Operating Temperature
-55 °C
Product details