Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
560 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
690 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
1.15 nC @ 5 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.01mm
Product details
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
BD 0.045
Each (Supplied on a Reel) (Exc. Vat)
BD 0.049
Each (Supplied on a Reel) (Including VAT)
100
BD 0.045
Each (Supplied on a Reel) (Exc. Vat)
BD 0.049
Each (Supplied on a Reel) (Including VAT)
100
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
100 - 400 | BD 0.045 | BD 4.500 |
500 - 900 | BD 0.040 | BD 4.000 |
1000+ | BD 0.030 | BD 3.000 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
560 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
690 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
1.15 nC @ 5 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.01mm
Product details