Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
730 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
3.04mm
Typical Gate Charge @ Vgs
1.9 nC @ 4.5 V, 3.6 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm
Product details
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
BD 3.025
BD 0.121 Each (In a Pack of 25) (Exc. Vat)
BD 3.327
BD 0.133 Each (In a Pack of 25) (inc. VAT)
Standard
25
BD 3.025
BD 0.121 Each (In a Pack of 25) (Exc. Vat)
BD 3.327
BD 0.133 Each (In a Pack of 25) (inc. VAT)
Standard
25
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 25 - 75 | BD 0.121 | BD 3.025 |
| 100 - 225 | BD 0.104 | BD 2.612 |
| 250 - 475 | BD 0.094 | BD 2.338 |
| 500 - 975 | BD 0.082 | BD 2.062 |
| 1000+ | BD 0.077 | BD 1.925 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
730 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
3.04mm
Typical Gate Charge @ Vgs
1.9 nC @ 4.5 V, 3.6 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm
Product details


