Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
210 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
6.4 nC @ 5 V
Height
0.9mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel Power MOSFET, 8V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
BD 1.375
BD 0.055 Each (In a Pack of 25) (Exc. Vat)
BD 1.513
BD 0.061 Each (In a Pack of 25) (inc. VAT)
Standard
25
BD 1.375
BD 0.055 Each (In a Pack of 25) (Exc. Vat)
BD 1.513
BD 0.061 Each (In a Pack of 25) (inc. VAT)
Standard
25
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 25 - 75 | BD 0.055 | BD 1.375 |
| 100 - 225 | BD 0.050 | BD 1.238 |
| 250 - 475 | BD 0.044 | BD 1.100 |
| 500 - 975 | BD 0.038 | BD 0.962 |
| 1000+ | BD 0.033 | BD 0.825 |
Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
210 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
6.4 nC @ 5 V
Height
0.9mm
Minimum Operating Temperature
-55 °C
Product details


