Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
700 mA
Maximum Drain Source Voltage
25 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
1.2 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Height
0.9mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel Power MOSFET, 25V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
BD 2.888
BD 0.116 Each (In a Pack of 25) (Exc. Vat)
BD 3.177
BD 0.128 Each (In a Pack of 25) (inc. VAT)
Standard
25
BD 2.888
BD 0.116 Each (In a Pack of 25) (Exc. Vat)
BD 3.177
BD 0.128 Each (In a Pack of 25) (inc. VAT)
Standard
25
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 25 - 75 | BD 0.116 | BD 2.888 |
| 100 - 225 | BD 0.099 | BD 2.475 |
| 250 - 475 | BD 0.088 | BD 2.200 |
| 500 - 975 | BD 0.077 | BD 1.925 |
| 1000+ | BD 0.072 | BD 1.788 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
700 mA
Maximum Drain Source Voltage
25 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
1.2 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Height
0.9mm
Minimum Operating Temperature
-55 °C
Product details


