Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
163 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Series
NVD5C434N
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
117 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
6.22mm
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
80.6 nC @ 10 V
Automotive Standard
AEC-Q101
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.38mm
Product details
N-Channel Power MOSFET, 40V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
BD 3.487
BD 1.744 Each (In a Pack of 2) (Exc. Vat)
BD 3.836
BD 1.918 Each (In a Pack of 2) (inc. VAT)
Standard
2
BD 3.487
BD 1.744 Each (In a Pack of 2) (Exc. Vat)
BD 3.836
BD 1.918 Each (In a Pack of 2) (inc. VAT)
Standard
2
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
2 - 18 | BD 1.744 | BD 3.487 |
20 - 198 | BD 1.556 | BD 3.113 |
200 - 998 | BD 1.397 | BD 2.794 |
1000+ | BD 1.270 | BD 2.541 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
163 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Series
NVD5C434N
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
117 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
6.22mm
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
80.6 nC @ 10 V
Automotive Standard
AEC-Q101
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.38mm
Product details