Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
83 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
56 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
6.22mm
Length
6.73mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
2.25mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
Vietnam
BD 6.930
BD 0.693 Each (In a Pack of 10) (Exc. Vat)
BD 7.623
BD 0.762 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 6.930
BD 0.693 Each (In a Pack of 10) (Exc. Vat)
BD 7.623
BD 0.762 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
Quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | BD 0.693 | BD 6.930 |
100 - 240 | BD 0.610 | BD 6.105 |
250+ | BD 0.544 | BD 5.445 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
83 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
56 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
6.22mm
Length
6.73mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
2.25mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
Vietnam