onsemi NXH35C120L2C2SG 3 Phase IGBT Module, 35 A 650 V DIP26, Through Hole
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
35 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20.0V
Number of Transistors
6
Package Type
DIP26
Configuration
3 Phase
Mounting Type
Through Hole
Channel Type
N
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BD 43.911
BD 43.911 Each (Exc. Vat)
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BD 48.302 Each (inc. VAT)
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BD 43.911
BD 43.911 Each (Exc. Vat)
BD 48.302
BD 48.302 Each (inc. VAT)
1
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Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
35 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20.0V
Number of Transistors
6
Package Type
DIP26
Configuration
3 Phase
Mounting Type
Through Hole
Channel Type
N
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products