Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3mA
Maximum Drain Source Voltage
30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-883
Pin Count
3
Drain Gate On-Capacitance
4pF
Source Gate On-Capacitance
4pF
Dimensions
1.08 x 0.68 x 0.41mm
Height
0.41mm
Width
0.68mm
Maximum Power Dissipation
100 mW
Maximum Operating Temperature
+150 °C
Length
1.08mm
Country of Origin
Malaysia
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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BD 0.040
Each (On a Reel of 8000) (Exc. Vat)
BD 0.044
Each (On a Reel of 8000) (Including VAT)
8000
BD 0.040
Each (On a Reel of 8000) (Exc. Vat)
BD 0.044
Each (On a Reel of 8000) (Including VAT)
8000
Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3mA
Maximum Drain Source Voltage
30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-883
Pin Count
3
Drain Gate On-Capacitance
4pF
Source Gate On-Capacitance
4pF
Dimensions
1.08 x 0.68 x 0.41mm
Height
0.41mm
Width
0.68mm
Maximum Power Dissipation
100 mW
Maximum Operating Temperature
+150 °C
Length
1.08mm
Country of Origin
Malaysia
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.